NASA 1996 SBIR Phase I

PROJECT TITLE : Simulators for Chemical and Physical Vapor Transport Crystal Growth

TECHNICAL ABSTRACT (LIMIT 200 WORDS)

It is proposed to develop computational Simulators for Chemical and Physical Vapor Transport (CVT/PVT) crystal growth with special emphasis on processing in Space. Crystal growth experiments in Space have provided ample evidence that properties of CVT/PVT crystals grown under reduced convection are superior to those grown on earth. The close interaction between transport and process- thermodynamics and chemistry results in complex transport phenomena, quantification of which requires detailed modeling and numerical simulation. In spite of continuing advances in crystal growth experiments, the current understanding of the role of convection in CVT/PVT is qualitative.

The task-specific Simulators to be developed under this program will incorporate detailed models of physical phenomena present in ground- and space-based CVT/PVT experiments, and will be based on efficient computational solvers. They will be used for analysis of current and projected crystal growth experiments, design and optimization of growth hardware, and selection of optimal processing conditions.

Phase I work will focus on defining required attributes, in terms of mathematical models and numerical algorithms, of the Simulators, as well as identifying the optimal computational solver for handling these types of problems. In Phase II we will construct, validate, and deliver these Simulators.

The Simulators to be developed under this program can be directly applied to growth of a variety of electronic materials, in particular SiC. The availability of these tools will help reduce the development and operating costs of new growth hardware systems, as well as help optimize the scale-up of current production techniques.

Cape Simulations, Inc.
Suite 220
888 Worcester Street
Wellesley, MA 02181