NASA 1996 SBIR Phase I


PROPOSAL NUMBER : 96-1 07.04-1100

PROJECT TITLE : High Performance Thin Film Piezoelectric Materials

TECHNICAL ABSTRACT (LIMIT 200 WORDS)

The potential applications of microelectromechanical systems (MEMS) have only begun to be recognized. This technology demands thin film materials with exceptional microstructural quality for high performance and processes with high yields. For piezoelectric microactuator applications, thin film lead zirconate titanate (PZT) is the leading material choice. Furthermore, substitutional modifications offer the possibility for drastically reduced drive voltages necessary for actuation. A significant opportunity exists to develop a new process for deposition of a thin film microactuator material based on PZT. Metalorganic chemical vapor deposition (MOCVD) is the method of choice because it yields excellent microcrystallinity, has high deposition rates, and scales to large areas. Preliminary results at ATMI indicate that the deposition of high quality substitutionally modified thin films based on PZT is possible by MOCVD. In Phase I, we will develop this process for piezoelectric applications. Actuation and the piezoelectric coefficients of both unmodified and modified PZT will be measured at North Carolina State University (NCSU). Phase II will result in a process optimized for microfabricated cantilever devices, which will be fabricated with NCSU.
POTENTIAL COMMERCIAL APPLICATIONS
The process for novel PZT thin film materials developed in this program will have numerous military and commercial applications, including MEMS devices such as adaptive optics, microvalves for industrial and aircraft fluid flow control, and microflaps for aircraft drag reduction.
NAME AND ADDRESS OF PRINCIPAL INVESTIGATOR
Ing-Shin Chen
Advanced Technology Materials, Inc.
7 Commerce Dr.
Danbury, CT 06810
NAME AND ADDRESS OF OFFEROR
Advanced Technology Materials, Inc.
7 Commerce Dr.
Danbury, CT 06810