NASA 1996 SBIR Phase I


PROPOSAL NUMBER : 96-1 01.03-1100D

PROJECT TITLE : Thick Intrinsic 4H-SiC Epitaxial Layers

TECHNICAL ABSTRACT (LIMIT 200 WORDS)

Silicon Carbide (SiC), with its wide bandgap, high breakdown field, and thermal conductivity, is an ideal material for high temperature and high power electronic devices. Commercially viable SiC devices require epitaxial growth processes that produce very smooth surface morphologies, low background impurity concentrations, polytype purity, and controlled, uniform, and reproducible layer thicknesses, n-type doping, and p-type doping. Current growth techniques suffer from process variabilities that make it difficult to reproducibly grow thick epitaxial layers with good surface morphologies and uniform background carrier concentrations, required for power devices. In Phase I we will develop, through careful process control and reactor technology, novel growth techniques that will greatly reduce the process variability in SiC CVD processes. The new growth techniques will permit reproducible growth of very thick, low background impurity epitaxial layers for high voltage devices. Undoped layers will first be examined, followed by initial intentional doping studies using the new techniques. In Phase II we will expand the technology to include the full range of intentional epilayer doping to form device structures, and the complete evaluation of high power devices. In Phase III we will commence commercialization of the epitaxial layers and devices generated by this process.
POTENTIAL COMMERCIAL APPLICATIONS
The development of a commercially viable, reproducible process for the growth of thick, lightly-doped SiC epitaxial layers will permit fabrication of devices for controlling power at levels unobtainable in any other commercial material system. These devices will be used in engine sensors and controls for automotive and jet engines, aerospace and advanced avionics systems, and electric cars.
NAME AND ADDRESS OF PRINCIPAL INVESTIGATOR
Barbara Landini
Advanced Technology Materials, Inc.
7 Commerce Dr.
Danbury, CT 06810
NAME AND ADDRESS OF OFFEROR
Advanced Technology Materials, Inc.
7 Commerce Dr.
Danbury, CT 06810