Project Summary

Proposal Number:

Project Title:High Power Silicon Carbide MOSFETs

Small Business Concern:
Advanced Tech Materials, Inc.
7 Commerce Drive
Danbury, CT 06810

Research Institution:
MIT Lincoln Laboratory
244 Wood Street
Lexington, MA 02173

Principal Investigator/Project Manager: Seungmoo Choi

Technical Abstract:
Space-based systems require advanced energy conversion technologies with improved performance and lower volume and weight. We propose to develop silicon carbide (SiC) vertical transistors using a novel geometry which permits much higher gate densities and smaller die area than conventional vertical MOSFETs. Because of the device geometry, there is also virtually no parasitic area as in conventional devices. The small size and decreased parasitics result in high current density and fast switching speeds and yet still achieves good pinch-off behavior. In addition, the high density permits small die sizes, which greatly reduces yield loss due to defects such as micropipes. The fabrication process is also simpler than conventional vertical devices - sub-micron geometries are produced without sub-micron masks or e-beam lithography. In Phase I, we will develop the technology base for high gate density transistors and demonstrate a prototype device. In Phase II, we will further optimize fabrication of MOS capacitors, develop suitable edge termination methods and contact methodologies for the small top contacts and produce high power MOS transistors. Phase III will consist of development of these devices for commercial applications.

Potential Commercial Applications:
TThe commercialization of space will require a wide range of advanced energy systems to drive down the cost and accelerate the use of space. Development of high density SiC MOSFETs for high temperature, high power applications will accelerate the commercialization of space as well as have a wide range of commercial uses; for example, in airplanes, automobiles and communications.