Project Title:

Title of Project: High Temperature Gallium Nitride-based Sensors and Electronics

94-1		08.07	1100	B		AMOUNT REQUESTED $

Title of Project: High Temperature Gallium Nitride-based Sensors 
and Electronics

Abstract:

The Gallium Nitride, Aluminum Nitride (Al,Ga)N system is ideal for 
use in high temperature sensor and electronics applications; the 
III-V nitrides have wide bandgaps, are thermally very stable and 
have a convenient, closely lattice-matched heterostructure system 
similar to that of GaAs/AlAs. The development of a well 
controlled III-V nitride heterostructure technology would open up 
a wide range of unique applications based on sensors with on-chip 
electronics, especially at high temperatures and blue/ W light 
emitters. In Phase I we propose to develop the growth and x-ray 
characterization of the III-V nitride materials on SiC substrates 
in parallel with the development of a dynamical x-ray simulation 
model. SiC substrates will greatly reduce the defect density 
compared to the more conventional sapphire substrates. The 
modeling effort will develop the first comprehensive diffraction 
model for hexagonal crystal materials. In Phase II we will 
further refine the growth conditions and x-ray simulation model 
and use this technology as a foundation to fabricated high 
temperature sensors and associated electronics, with a focus on 
optical sensors. Phase III will consist of further development of 
this technology leading to commercialization of these devices.

The development of a well controlled III-V nitride 
heterostructure technology would open up a wide range of unique 
applications, including high temperature sensors and electronics, 
as well as blue/ W light emitters for high density optical 
storage and excitation sources for a wide range of spectroscopic 
analysis applications.

KEY WORDS

Advanced Technology Materials, Inc.
7 Commerce Drive
Danbury, CT 06810 (203) 794-1100