Project Title:
Title of Project: High Temperature Gallium Nitride-based Sensors and Electronics
94-1 08.07 1100 B AMOUNT REQUESTED $
Title of Project: High Temperature Gallium Nitride-based Sensors
and Electronics
Abstract:
The Gallium Nitride, Aluminum Nitride (Al,Ga)N system is ideal for
use in high temperature sensor and electronics applications; the
III-V nitrides have wide bandgaps, are thermally very stable and
have a convenient, closely lattice-matched heterostructure system
similar to that of GaAs/AlAs. The development of a well
controlled III-V nitride heterostructure technology would open up
a wide range of unique applications based on sensors with on-chip
electronics, especially at high temperatures and blue/ W light
emitters. In Phase I we propose to develop the growth and x-ray
characterization of the III-V nitride materials on SiC substrates
in parallel with the development of a dynamical x-ray simulation
model. SiC substrates will greatly reduce the defect density
compared to the more conventional sapphire substrates. The
modeling effort will develop the first comprehensive diffraction
model for hexagonal crystal materials. In Phase II we will
further refine the growth conditions and x-ray simulation model
and use this technology as a foundation to fabricated high
temperature sensors and associated electronics, with a focus on
optical sensors. Phase III will consist of further development of
this technology leading to commercialization of these devices.
The development of a well controlled III-V nitride
heterostructure technology would open up a wide range of unique
applications, including high temperature sensors and electronics,
as well as blue/ W light emitters for high density optical
storage and excitation sources for a wide range of spectroscopic
analysis applications.
KEY WORDS
Advanced Technology Materials, Inc.
7 Commerce Drive
Danbury, CT 06810 (203) 794-1100