Project Title:
Safe Bulk AlN Single Crystal Growth
94-1 08.07 1100
Safe Bulk AlN Single Crystal Growth
Abstract:
The hexagonal wurtzite structured gallium nitride (GaN) and
aluminum nitride (AlN), with direct band gaps of 3.4 and 6.2 eV,
respectively, have potential applications for high temperature
electronic devices operated at temperatures above 870K. This IIIV
nitride semiconductor materials technology development has been
slowed by the deficiency in lattice-matched substrates. In this
unique Phase I proposal, ATMI will explore the growth of single
crystal Aluminum Nitride (AlN) using sublimation techniques. ATMI
in-house grown 6-H SiC seed crystals and modified sublimation
techniques will be used to improve the quality and yield of the
AlN single crystals. In Phase II, the design and process
parameters for the production of AlN single crystals will be
optimized, and high quality AlN single crystal substrates will
be used for the fabrication of prototype blue LED devices. A
fundamental III-V nitride technology leap will be achieved by
correlating growth conditions with the occurrence and subsequent
elimination of specific defect structures. In Phase III, ATMI
will scale the crystal growth process to enable the manufacture
of specific devices, and to supply substrates in order to
accelerate the growth of a III-V nitride based semiconductor
industry.
This program will lay the foundation for cost-effective and
reproducible manufacture of aluminum nitride single crystals
which will find broad use in the electronics industry for blue
LED, UV lasers and high temperature semiconductor devices.
Key Words
Advanced Technology materials, Inc.
7 commerce Dr.
Danbury, CT 06810