Project Title:

Safe Bulk AlN Single Crystal Growth

  94-1	08.07	1100

  Safe Bulk AlN Single Crystal Growth

Abstract:

The hexagonal wurtzite structured gallium nitride (GaN) and 
aluminum nitride (AlN), with direct band gaps of 3.4 and 6.2 eV, 
respectively, have potential applications for high temperature 
electronic devices operated at temperatures above 870K. This IIIV 
nitride semiconductor materials technology development has been 
slowed by the deficiency in lattice-matched substrates. In this 
unique Phase I proposal, ATMI will explore the growth of single 
crystal Aluminum Nitride (AlN) using sublimation techniques. ATMI 
in-house grown 6-H SiC seed crystals and modified sublimation 
techniques will be used to improve the quality and yield of the 
AlN single crystals. In Phase II, the design and process 
parameters for the production of AlN single crystals will be 
optimized, and high quality AlN single crystal substrates will 
be used for the fabrication of prototype blue LED devices. A 
fundamental III-V nitride technology leap will be achieved by 
correlating growth conditions with the occurrence and subsequent 
elimination of specific defect structures. In Phase III, ATMI 
will scale the crystal growth process to enable the manufacture 
of specific devices, and to supply substrates in order to 
accelerate the growth of a III-V nitride based semiconductor 
industry.

This program will lay the foundation for cost-effective and 
reproducible manufacture of aluminum nitride single crystals 
which will find broad use in the electronics industry for blue 
LED, UV lasers and high temperature semiconductor devices.

Key Words

Advanced Technology materials, Inc.
7 commerce Dr.
Danbury, CT 06810