Single Mode Semiconductor Laser Utilizing Field Interference Effects for 2-5 Micron
94-1 08.03 1533 C
Single Mode Semiconductor Laser Utilizing Field Interference
Effects for 2-5 Micron
We propose to develop single mode tunable semiconductor lasers
that are based on a novel field interference principle. This
technique utilizes electromagnetic field interference effects
within the laser cavity to cause a frequency dependent
intracavity loss mechanism. As a result, the spectral properties
of the emitted light can be controlled. The technique can be used
for any type of material system. In particular, we shall
concentrate on fabricating 2 - 5 um Sb compound semiconductor
lasers using MBE growth technique. It is the first use of the MBE
technique to grow InAsSbP as the active layer. The device
structure can be lattice matched to either GaSb or InAs. Theses
devices have a clear advantage over other structures of single
mode lasers, such as DFB and DBRs. They are simpler to fabricate,
cost effective, yet demonstrate a wide range of desired features,
such as spectral purity, tunability, and high output power.
The uniqueness of the proposed approach, and the superior
properties will make these type of lasers the prime candidates
for numerous applications, ranging from Lidar remote sensing, to
optical communication, high resolution laser spectroscopy, gas
detection for pollution monitoring and medical applications, as
well as nonlinear optics and optical memory.
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