Project Title:

Pyroelectric Detectors by Epitaxial CVD Growth on Silicon

08.13-6000
900508
Pyroelectric Detectors by Epitaxial CVD Growth on Silicon

Abstract:

Mon-cryogenic infrared detector arrays suitable for operation between 10 and 16 microns
can be fabricated from pyroelectric thin films such as strontium-barium niobate.
Detector sensitivity, however, is limited by film thickness. Sensitivity can be increased
by decreasing film thickness, but manufacturing technology presently sets a limit
below which thickness cannot be reduced. Spire proposes to explore metalorganic chemical
vapor deposition (MOCVD) as a means of removing this restriction, making possible
a new class of more sensitive non-cryogenic IR detectors. The proposed research will
capitalize upon recent developments in thin film superconductor technology to grow
(SrBa)Nb2 and related compounds. MOCVD-compatible barium and strontium precursors
have been synthesized within the last year, and are now available in limited quantities.
They will be employed to deposit films on silicon and sapphire substrates, and the
resulting films will be characterized with respect to composition, structure, thermal
and electrical properties.
This innovative approach to fabricating pyroelectric materials will lead directly
to improved infrared detectors, and indirectly to new opt-electronic circuits which
take advantage of the ferroelectric and piezoelectric properties of ceramic thin
films.
strontium, barium niobate, pyroelectric infrared detector, metalorganic chemical
vapor deposition