Project Title:
High-Indium-Content, High-Electron-Mobility Transistors for RF Communications Devices
14.05-6000A
NAS3-25867
High-Indium-Content, High-Electron-Mobility
Transistors for RF Communications Devices
Spire Corporation
Patriots Park
Bedford, MA 01730
Patricia Sekula-Moise
(617-275-6000)
Abstract:
There exists an ongoing demand for high-performance transistors in the field of
satellite communications. This project focuses on high-electron-mobility transistors
(HEMTs) useful in a variety of microwave applications. The focus is on the growth
of high-indium-content pseudomorphic HEMTS by metalorganic chemical vapor deposition
(MOCVD). By increasing the amount of indium present in the two-dimensional electron
gas channel, significant gains may be realized in terms of electron peak velocity,
electron mobility, reduction of trap-related generation and recombination noise,
and lower output conductance. These accomplishments will result ultimately in a superior
high-speed device.
Potential Commercial Application:
Potential Commercial Applications: High-indium-content pseudomorphic HEMTs should
theoretically have higher transconductances than "standard" HEMTs, leading to their
use in low-noise microwave amplifiers and oscillators in microwave control circuitry
such as shifting and phase-shifting for antenna arrays.