Project Title:

High-Indium-Content, High-Electron-Mobility Transistors for RF Communications Devices

14.05-6000A
NAS3-25867
High-Indium-Content, High-Electron-Mobility
	Transistors for RF Communications Devices
Spire Corporation
	Patriots Park
	Bedford, MA 01730
		Patricia Sekula-Moise
(617-275-6000)

Abstract:

	There exists an ongoing demand for high-performance transistors in the field of
satellite communications. This project focuses on high-electron-mobility transistors
(HEMTs) useful in a variety of microwave applications. The focus is on the growth
of high-indium-content pseudomorphic HEMTS by metalorganic chemical vapor deposition
(MOCVD). By increasing the amount of indium present in the two-dimensional electron
gas channel, significant gains may be realized in terms of electron peak velocity,
electron mobility, reduction of trap-related generation and recombination noise,
and lower output conductance. These accomplishments will result ultimately in a superior
high-speed device.

Potential Commercial Application:

Potential Commercial Applications: High-indium-content pseudomorphic HEMTs should
theoretically have higher transconductances than "standard" HEMTs, leading to their
use in low-noise microwave amplifiers and oscillators in microwave control circuitry
such as shifting and phase-shifting for antenna arrays.