Project Title:

A 128 X 128 Element, Indium-Gallium-Arsenide, IR Detector Array at 300 K

08.01-1188
NAS7-1087
A 128 X 128 Element, Indium-Gallium-Arsenide,
	IR Detector Array at 300 K
Epitaxx, Inc.
	3490 US Route One
	Princeton, NJ 08540
		Gregory H. Olsen
(609-452-1188)

Abstract:

	A two-dimensional, indium-gallium-arsenide detector array of unprecedented size
(128 x 128 elements) will be developed for room-temperature operation between 1.0
and 2.5 microns. An innovative, hydride vapor-phase epitaxy crystal-growth method
and fiber-optic probing technique to measure quantum efficiency at the wafer level
will be applied. Phase I will deliver 30 x 30 microns pixels (spaced 50 X 50 microns)
of conventional In.53Ga.47As detectors (for 1.0-to-1.7 microns) on a two-inch-diameter
InP substrate together with probe data. Performance goals are an 80-percent QE (1.3
microns) and a 300K dark-current (-5V) density below 1 x 10-6 amp/cm2. In the same
pixel geometry, detectors of In.8Ga.2As/InAs.6P.4 (for 1.0-to-2.5 microns sensitivity)
on three-inch-diameter InP substrates would be developed in Phase II. Two working
128 x 128 detector arrays mounted on a two-dimensional Reticon multiplexer would
also be delivered. Performance goals include one-percent pixel dropouts and 300K
D* > 3 x 1011 cm(Hz)1/2/W at 2.5 microns.

Potential Commercial Application:

Potential Commercial Applications: Applications would be in satellite imaging, remote
sensing, LIDAR, windshear avoidance, and spectroscopy.