Visible, Semiconductor Diode Lasers Grown by Hydride Vapor-Phase Epitaxy
Visible, Semiconductor Diode Lasers Grown by
Hydride Vapor-Phase Epitaxy
3490 US Route One
Princeton, NJ 08540
Donald E. Ackley
Visible, semiconductor diode lasers are of interest for optical recording having
increased densities and direct read-after-write applications. Available devices based
on InGaP/InGaAlP heterostructures operate at wavelengths of 0.67 m; these cannot
be easily reduced due to the need to incorporate aluminum into the active layers.
An alternate approach of InGaP lattice-matched and strained layers grown by hydride
vapor-phase epitaxy (VPE) on a GaAsP substrate with buffer layers may achieve operating
wavelengths as short as 0.62 m. Diode lasers grown by VPE with an GaAsP active layer
and InGaP cladding have already demonstrated operating wavelengths as short as 0.68
m. The use of InGaP, quantum-well, strained active layers and wide-gap, InGaP cladding
layers, lattice-matched to GaAsP instead of GaAs, will allow reduction in operating
wavelengths without adding aluminum to the active layers. These structures should
provide an attractive alternative to InGaP/InGaAlP devices for visible laser structures.
Potential Commercial Application:
Potential Commercial Applications: Solid-state, visible (0.62 m) lasers could replace
gas lasers in optical scanning and recording and enable new applications such as
projection displays and character recognition systems.