Project Title:

Magnetic Float Zone Microgravity Crystal Growth: Application to Silicon Carbide

15.01-0333
Magnetic Float Zone Microgravity Crystal Growth: Application to Silicon Carbide
Scientific Research Associates Inc.
PO Box 1058
Glastonbury
CT
06033
Y. T.
Chan
(205-659-0333)
MSFC

Abstract:

By applying an axial DC magnetic field to a floating zone crystal growth process
it may be possible to improve the quality of materials grown by this technique under
microgravity conditions. The purpose of the magnetic field is to suppress the undesirable
surface-tension-driven convection caused surface temperature and dopant variations.
In Phase I, the concept will be verified through numerical magnetohydrodynamic and
heat transfer simulations of a realistic floating zone system. A parametric study
will be performed in Phase II to compile a knowledge base for designing a commercial
apparatus with automated feedback control of the growing process. The entire system
will be self-contained and require minimum human control. Realistic parameters will
be used for simulating growth of titanium carbide crystals for use as substrates
in the epitaxial growth of silicon carbide. The design studies of Phase II would
be carried out for both earth gravity and microgravity conditions, and an orbital
reactor would also be designed.

Potential Commercial Application:

Potential Commercial Applications:  Results of this work could meet the need of the
semiconductor industry for high quality crystals of various compounds.