Project Title:

High-Gain Avalanche Photodiode Arrays for Long-Wavelength Applications

08.01-1188
High-Gain Avalanche Photodiode Arrays for Long-Wavelength Applications
Epitaxx Inc.
3490 US Route One
Princeton
NJ
08540
Gregory H.
Olsen
(609-452-1188)
JPL

Abstract:

This project aims to develop high-performance arrays of indium-gallium-arsenide (InGaAs)
avalanche photodiodes (APDs) for fiber-optic remote sensing and spectroscopy in the
1.0 -1.7 micron spectral band. Its goal is to increase array sensitivity a factor
of ten over conventional pin detectors. The innovation combines a novel doping and
thickness profiling technique with modifications to the vapor-phase epitaxy, crystal-growth
system to provide unprecedented uniformity in thickness and doping, two parameters
which dramatically affect APD performance. The APD structure chosen is a simple,
planar, floating guard-ring structure recently demonstrated by the company to operate
at room temperature.
In Phase I, InP/InGaAs layers will be grown and their doping-thickness profiles measured
by non-destructive means.  The plan is to fabricate 60 m diameter APD devices and
correlate the profiles with yield. Plans for Phase II include development of a ten-element
linear APD array with associated read-out schemes and control circuits having a gain
of ten and a NEP (noise equivalent power) below 10-13 Watts per Hertz at room temperature.

Potential Commercial Application:

Potential Commercial Applications:  Applications
include astronomy, remote sensing, satellite imaging, spectroscopy, and photoluminescence.