Project Title:

Silicon Carbide MOSFETs for High-Temperature, Small-Signal Amplifiers

01.03-5709A
Silicon Carbide MOSFETs for High-Temperature, Small-Signal Amplifiers
Cree Research, Inc.
2810 Meridian Parkway, Suite 176
Durham
NC
27713
John W.
Palmour
(919-361-5709)
LeRC

Abstract:

Silicon carbide possesses properties that allow operation of electronic devices at
high-temperatures: a theoretical maximum operating temperature of 925 C for cubic-SiC
(beta) and 1240 C for alpha-SiC (6H). Both forms, having high breakdown electric
fields (ten times that of Si and GaAs), allow high-power operation. Recent research
has demonstrated depletion-mode, metal-oxide-semiconductor, field-effect transistors
(MOSFETs) in -SiC with good characteristics at temperatures as high as 650 C, the
highest temperature ever reported for a solid-state transistor. These devices failed
at 700 C due to failure of the thin gate insulator and not the semiconductor. Process
research has also yielded 6H-SiC thin films having a much lower defect density than
-SiC films.
This project will fabricate MOSFETs in both the depletion- and inversion-mode using
the higher quality 6H-SiC thin film. It will investigate inversion-mode MOSFETs in
the -SiC for use in small signal amplification.

Potential Commercial Application:

Potential Commercial Applications:  Applications would be where operation of small
signal amplifiers at high temperatures is required and where radiation resistance
is desirable.