High Performance Indium-Gallium-Arsenide Detector Arrays for the 1.0-to-1.7 Micron
High Performance Indium-Gallium-Arsenide
Detector Arrays for the 1.0-to-1.7 Micron
3490 U.S. Route I
Princeton, NJ 08540
Vladimir S. Ban (609-452-1188)
GSFC -- NAS5-30278
The purpose of the Phase I project was to improve the material properties of indium-gallium-arsenide
(InGaAs) crystals grown by vapor-phase epitaxy such that ten-element, linear arrays
of room-temperature photodetectors can be fabricated with +10 percent uniformity.
In Phase I, this project successfully produced a multiplexed, 256-element, detector
array for the spectral range of 0.8 to 1.7 m. These arrays were based on epitaxial
layers of lattice-matched In0.53Ga0.47As/InP alloys.
Specifically, a complete, 256-element linear array of 30 x 30 m detectors was packaged
in a Reticon multiplexer package and demonstrated with a commercial optical multichannel
analyzer unit. The far-field pattern of a 1.3 m semiconductor laser was also monitored
(with 100 m spatial resolution) using this array. The frequency response of this
instrument was extended to a wave length of 1.7 m using an InGaAs array.
Potential Commercial Application:
Potential Commercial Application: Potential applications include satellite imaging
and remote sensing for detection of water vapor and foliage, fiber optic receiver
arrays, and optical multichannel analyzers for spectroscopy at wave lengths approaching