Project Title:

High Efficiency Radiation-Resistant Indium Phosphide Solar Cells

10.03-6000
High Efficiency Radiation-Resistant Indium Phosphide Solar Cells
Spire Corp.
Patriots Park
Bedford
MA
01730
Spitzer
Mark
NAS3-24857
Amount:   
LeRC
NAS3-24395

Abstract:

   This Phase II proposal addresses radiation-resistant indium phosphide(InP) solar cells.  Owing to unusual radiation damage annealing properties, (1-3)
such cells are of considerable interest for space applications.  Research in Phase
II has as its primary object the development of innovative cell processing techniques
that may be applied to cell manufacture.

In Phase I, the feasibility of various InP cell fabrication techniques were evaluated.
 A new cell fabrication process based on ion implantation was identified, and all
steps in the cell fabrication process were evaluated.  Solar cells with efficiency
of 10% were fabricated with the techniques identified in this research.  Concurrently,
modeling was carried out which indicates the manner in which efficiency of 20% may
be attained.  The modeling and analysis of actual cells fabricated during Phase I
has identified areas requiring further research in Phase II.  This Phase I research
has thus established the feasibility of the
 proposed work.

In Phase II, research will be carried out that addresses specific problems in cell
design and fabrication that were identified in Phase I.  This research will include
an investigation of improved junctions and junction formation techniques.  Phase
II also includes research on the contact metallurgy.  Various types of cells will
be fabricated for testing of radiation resistance.