NASA SBIR 2020-II Solicitation

Proposal Summary

Proposal Information

Proposal Number:
20-2- Z1.06-5841
Phase 1 Contract #:
80NSSC20C0329
Subtopic Title:
Radiation tolerant high-voltage, high-power electronics
Proposal Title:
Radiation Tolerant High-Voltage Silicon Carbide Devices

Small Business Concern

   
Firm:
          
Logisic Devices, Inc.
          
   
Address:
          
1968 Serge Avenue, San Jose, CA 95130
          
   
Phone:
          
(518) 596-9083                                                                                                                                                                                
          

Principal Investigator:

   
Name:
          
Vipindas Pala
          
   
E-mail:
          
vipin@logisicdevices.com
          
   
Address:
          
1968 Serge Ave, CA 95130 - 1849
          
   
Phone:
          
(518) 596-9083                                                                                                                                                                                
          

Business Official:

   
Name:
          
Vipindas Pala
          
   
E-mail:
          
vipin@logisicdevices.com
          
   
Address:
          
1968 Serge Ave, CA 95130 - 1849
          
   
Phone:
          
(518) 596-9083                                                                                                                                                                                
          

Summary Details:

   
Estimated Technology Readiness Level (TRL) :                                                                                                                                                          
Begin: 4
End: 5
          
          
     
Technical Abstract (Limit 2000 characters, approximately 200 words):

Silicon Carbide (SiC) high voltage power devices are attractive for NASA space missions as overall weight of the power unit can be decreased. However, previous studies have shown that SiC power devices are susceptible catastrophic failure, burnout and degradation at voltage stress lower than half the rating under radiation. In this Phase II effort, we propose to improve the radiation hardness of Silicon Carbide vertical devices such that they can reliably operate at full rated voltage under heavy ion radiation in space. 

 

          
          
     
Potential NASA Applications (Limit 1500 characters, approximately 150 words):

There is a high demand for high voltage, fast switching power semiconductors with excellent high temperature performance and improved rad-hard performance for Spacecraft power systems. High voltage SiC power devices can improve the efficiency and power density of the Power Condition Unit, PPU, motor drive and TWT power supplies.

          
          
     
Potential Non-NASA Applications (Limit 1500 characters, approximately 150 words):

The proposed technology has large potential in the commercial small satellite market in Travelling Wave Tube Amplifiers and satellite electric propulsion systems.

          
          
     
Duration:     24
          
          

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