NASA SBIR 2014 Solicitation

FORM B - PROPOSAL SUMMARY


PROPOSAL NUMBER: 14-1 H9.03-9112
SUBTOPIC TITLE: Long Range Space RF Telecommunications
PROPOSAL TITLE: Radiation Hard Multichannel AlN/GaN HEMT for High Efficiency X- and Ka-Band Power Amplifiers

SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
Agnitron Technology
6595 Edenvale Boulevard, Suite 180
Eden Prairie, MN 55346 - 2506
(952) 937-7505

PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
Andrei Osinsky
andrei.osinsky@agnitron.com
6595 Edenvale Blvd, Suite 180
Eden Prairie, MN 55346 - 2506
(952) 937-7505

CORPORATE/BUSINESS OFFICIAL (Name, E-mail, Mail Address, City/State/Zip, Phone)
Ross Miller
ross.miller@agnitron.com
6595 Edenvale Blvd, Suite 180
Eden Prairie, MN 55346 - 2506
(952) 937-7505

Estimated Technology Readiness Level (TRL) at beginning and end of contract:
Begin: 3
End: 5

Technology Available (TAV) Subtopics
Long Range Space RF Telecommunications is a Technology Available (TAV) subtopic that includes NASA Intellectual Property (IP). Do you plan to use the NASA IP under the award?
No

TECHNICAL ABSTRACT (Limit 2000 characters, approximately 200 words)
This project is directed to the development of low-loss, high power-density Aluminum Nitride (AlN)/Gallium Nitride (GaN) heterostructure based transistors for enabling high-efficiency solid state power amplifiers (SSPA) needed for advancing capabilities of future robotic and human exploration spacecraft. The AlN/GaN heterostructure is a particularly attractive system for switch-mode applications due to the extremely high charge density, high electron mobility, high intrinsic breakdown field, and physical thinness achievable and has seen widespread investigation toward solid-state amplifiers in the recent years. However, very few innovations have been proposed with this heterostructure despite its expansive capacity for various creative device concepts. A new patent-pending multichannel AlN/GaN Field Screening High Electron Mobility Transistor (FS-HEMT) design is described. Preliminary experimental results are presented validating design principles that will eliminate current collapse phenomenon at X- and Ka-band frequencies that has plagues traditional HEMT designs and will ultimately deliver a low-loss switch-mode device.

POTENTIAL NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
The intrinsic field screening properties of the FS-HEMT structure provide for superiors radiation hard and reliability properties over other GaN HEMT using passivation techniques to overcome current collapse. The proposed approach has strong potential to be integrated into high efficiency SSPAs for all microwave communication and radar applications including active phased array antennas and satellite communication.

POTENTIAL NON-NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
Non-NASA commercial applications include civilian aerospace radar and communication applications.

TECHNOLOGY TAXONOMY MAPPING (NASA's technology taxonomy has been developed by the SBIR-STTR program to disseminate awareness of proposed and awarded R/R&D in the agency. It is a listing of over 100 technologies, sorted into broad categories, of interest to NASA.)
Amplifiers/Repeaters/Translators
Transmitters/Receivers

Form Generated on 04-23-14 17:37