NASA SBIR 2011 Solicitation
FORM B - PROPOSAL SUMMARY
PROPOSAL NUMBER: |
11-2 O1.05-9304 |
PHASE 1 CONTRACT NUMBER: |
NNX12CE46P |
SUBTOPIC TITLE: |
Long Range Space RF Telecommunications |
PROPOSAL TITLE: |
X-Band GaN Power Amplifiers for Long Range Space RF Telecommunications |
SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
Nitronex Corp
2305 Presidential Drive
Durham, NC 27703 - 8039
(919) 807-9100
PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
Neil Craig
ncraig@nitronex.com
2305 Presidential Drive
Durham, NC 27703 - 8039
(919) 424-5192
Estimated Technology Readiness Level (TRL) at beginning and end of contract:
Begin: 3
End: 6
TECHNICAL ABSTRACT (Limit 2000 characters, approximately 200 words)
The future capabilities of sensors and instrumentation deployed in space will continue to increase, resulting in increasing amounts of collected data. To reach these higher speed data rates, increases to the overall system gain of the communication link will be required. A deterministic method to increase system gain of a RF communication link is to provide higher transmitted RF power. However, with this higher RF output power also comes the challenge of maximizing power efficiency and reducing the size weight and power (SWAP) of the power amplifier (PA) for long-range space missions. The innovation will be to develop a Solid-State Power Amplifier (SSPA) that produces 50 W of linear RF (100W max) at X-Band (8.5 GHz) with high DC-to-RF-efficiency (> 50%) and low mass. The significance will be the utilization of wide band-gap RF semiconductors to efficiently create high RF power that is robust to the high radiation environments of space. A wide band-gap compound semiconductor material such as Gallium Nitride (GaN) will provide this required innovation. GaN-based Field Effect Transistors (FETs) have the potential to operate at power densities of up to 10 times that of conventional RF semiconductor technologies, which will enable compact PAs with higher RF output power to be implemented. The proposed GaN PA design is estimated to be >50% smaller in both size and weight compared to existing TWTA solutions and almost 20% lower in power consumption for typical designs used in long-range space RF Telecommunications. In summary, Applying novel GaN semiconductor materials in innovative PA designs are required for long-range space RF communication systems to fully reach their performance potential and to reduce their size, weight, and power.
POTENTIAL NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
Long Range Space RF Telecommunications, specifically X, Ku band solid state power amplifiers (SSPAs) for sub 100W power levels.
POTENTIAL NON-NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
Commercial Satellite communications (SATCOM). C, X, and Ku-band Radar Systems. Point to point communications systems.
TECHNOLOGY TAXONOMY MAPPING (NASA's technology taxonomy has been developed by the SBIR-STTR program to disseminate awareness of proposed and awarded R/R&D in the agency. It is a listing of over 100 technologies, sorted into broad categories, of interest to NASA.)
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Amplifiers/Repeaters/Translators
Circuits (including ICs; for specific applications, see e.g., Communications, Networking & Signal Transport; Control & Monitoring, Sensors)
Distribution/Management
Quality/Reliability
Spacecraft Instrumentation & Astrionics (see also Communications; Control & Monitoring; Information Systems)
Transmitters/Receivers
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Form Generated on 09-03-12 17:04
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