NASA SBIR 2007 Solicitation


PROPOSAL NUMBER: 07-2 O1.09-9383
SUBTOPIC TITLE: Long Range Space RF Telecommunications
PROPOSAL TITLE: Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers

SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
SVT Associates
7620 Executive Drive
Eden Prairie, MN 55344 - 3677
(952) 934-2100

PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
Bentao Cui
7620 Executive Dr
Eden Prairie, MN 55344 - 3677
(952) 934-2100

Expected Technology Readiness Level (TRL) upon completion of contract: 3 to 4

TECHNICAL ABSTRACT (Limit 2000 characters, approximately 200 words)
High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact, solid state lighting, high-temperature and high-power electronics, microelectronic and mechanical sensors, and high-efficiency solar cells are all poised at a new level of development. This enormous market is waiting for low-cost, high quality substrates to achieve performance and fabrication economies of scale. After achieving dislocation densities below 1E7 cm-2 in the phase I work, this NASA SBIR phase II project addresses the development of a dislocation filter that can routinely prepare low-stress GaN thin films with threading dislocation densities below 1E6 cm-2. The method relies on using a low-angle ion beam to induce both nanofilter for defect reductions and to inhibit droplet formation at low growth temperatures. Dislocation densities have so far been determined by standard etch pit densities method. The goal the project to optimize the multiple defect nanofilter with smoothening by transition layers in between filters to reduce the TD to less than 1E6 cm-2 and process, fabricate high performance HEMT for solid state high power amplifier (SSPA) applications. To obtain a more practical evaluation of the effectiveness and commercial viability of the method, heterojunction field effect transistors with high electron mobility will be fabricated in these ultra-low defect density films. These high-quality material based high electron mobility transistors (HEMTs) will enable high linearity power amplifiers with excellent thermal stability and frequency response. The proposed method to grow on low-stress, low-dislocation density films will lead to the production of electronic devices of unparalleled performance.

POTENTIAL NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
High speed and high power amplifiers, radiation-hard and ultra-low noise amplifiers, HEMT devices for radar and range finding, collision avoidance, and digital transmission, UV photo detectors for free-space optical communications, astrophysics, and biological agent detection, flame detection, and missile launch monitoring.

POTENTIAL NON-NASA COMMERCIAL APPLICATIONS (Limit 1500 characters, approximately 150 words)
HEMT device for RF and microwave mobile wireless communications. Blue lasers, high brightness visible LEDs, UV detectors for chemical and biological agent spectroscopy and threat detection, ozone detection and environmental monitoring.

NASA's technology taxonomy has been developed by the SBIR-STTR program to disseminate awareness of proposed and awarded R/R&D in the agency. It is a listing of over 100 technologies, sorted into broad categories, of interest to NASA.

Guidance, Navigation, and Control
Radiation-Hard/Resistant Electronics
Semi-Conductors/Solid State Device Materials

Form Generated on 10-23-08 13:36