NASA SBIR 02-1 Solicitation

FORM B - PROPOSAL SUMMARY


PROPOSAL NUMBER:02- S4.05-7791 (For NASA Use Only - Chron: 024208 )
SUBTOPIC TITLE: Advanced Miniature and Microelectronics, Nanosensors, and Evolvable Hardware
PROPOSAL TITLE: Laser Doping for Silicon Carbide Device Fabrication

SMALL BUSINESS CONCERN (Firm Name, Mail Address, City/State/Zip, Phone)
AppliCote Associates
894 Silverado Court
Lake Mary , FL   32746 - 4967
(407 ) 322 - 4460

PRINCIPAL INVESTIGATOR/PROJECT MANAGER (Name, E-mail, Mail Address, City/State/Zip, Phone)
Nathaniel Quick
Nquick1262@aol.com
894 Silverado Court
Lake Mary , FL   32746 - 4967
(407 ) 322 - 4460

TECHNICAL ABSTRACT (LIMIT 200 WORDS)
Technical Abstract
Applicote Associates proposes a 6 month $70K program to establish the
feasibility of controlled laser doping of silicon carbide as an enabling
process step for the fabrication of advanced microelectronics and sensors
requiring thermal management, high temperature stability, high power, long
life, radiation hardness and nanoscale features. Doping, is the focus of
this project with the intent of understanding additional diffusion driving
forces, in addition to the conventional Fick?s driving force, which may arise from laser dopant substrate interactions. The laser doping technology proposed
by AppliCote is derived from patented direct write technology, owned by
the PI, that eliminates the need for additive material processes. The
ultimate success for microsystem integration based upon wide bandgap
semiconductors, such as silicon carbide, is dependent on materials/process
development, which drives 1) RF/Microwave/Millimeter wave Technology, 2)
High Power Conversion and Distribution Electronics and 3) semiconductor UV
Optical Sources. A target device to be addressed in Phase II is the
development of a terahertz Schottky diode signal processor.

POTENTIAL COMMERCIAL APPLICATIONS (LIMIT 150 WORDS)
Silicon carbide and other wide bandgap advanced microelectronics and
sensors requiring thermal management, high temperature stability, high
power, long life, radiation hardness and nanoscale features. A target
device is the development of a terahertz Schottky diode signal processor
for telecommunications.

POTENTIAL NASA APPLICATIONS (LIMIT 150 WORDS)

Silicon carbide and other wide bandgap advanced microelectronics and
sensors requiring thermal management, high temperature stability, high
power, long life, radiation hardness and nanoscale features. A target
device to be addressed is the development of a terahertz Schottky diode mixer
for deep space signal processing and detection.



Form Printed on 09-05-02 10:10