Low-Noise Cryogenic Germanium Junction Field-Effect Transistor

GPD Optoelectronics Corp.

Salem, NH
 

Developed low-noise Junction Field-Effect Transistors (JFETs) for deep cryogenic applications.

• Demonstrated Germanium JFETs that exhibit very low noise over the cryogenic range down to 30K with stable DC characteristics. Other types of available transistors only provide low-noise performance down to about 80K.
• Improves scientific return by making optimum use of sensor capabilities in space missions.
• These germanium JFETs can operate down to the lowest cryogenic temperatures (~ 1K), although their noise increases.

• Prototypes provided to commercial company for evaluation as an instrument preamplifier.
• Possible application in cryogenic end of interface circuitry for superconductive electronics.
• Details of further development are available on the GPD website at www.gpd-ir.com (click “R&D” and then “cryogenic FTP site”).

• Provides the active element in cryogenic readout electronics for NASA infrared sensors, visible range photodetectors and x-ray detectors.
• Have applications in materials research, astronomy, particle and nuclear physics, and solar system exploration.
• Evaluation by NASA for use in cryogenic sensor preamplifiers in scientific spacecraft.
• Prototypes have been provided for evaluation to interested parties in government organizations and universities.

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Sensors

Curator: SBIR Support              04/20/07