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ARCHIVED
- Data Not Current
For Information
Purposes Only
 Glenn
Research Center
1986 - 1988
Phase II
High Volume
Metal Organic Chemical Vapor Deposition (MOCVD) Device Wafer Production
Kopin
Corporation
Taunton, MA
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INNOVATION
Advanced heterostructure devices for
microwave communications
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Epitaxial Layer Structure
Optional Powerpoint
file
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ACCOMPLISHMENTS
- Introduced the first carbon-doped
Heterojunction Bipolar Transistor (HBT) Device Wafer to commercial
market
- Introduced InGaP HBT Device
Wafer for High Reliability Applications
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COMMERCIALIZATION
- Leading provider of HBT Device
Wafers in world wide markets
- Commercial sales increased 6x,
from ~$3M in 1995 to est. $18M in 1998
- HBT L-Band Power Amplifiers
(PA) Rapidly Penetrating Cellular Handset
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GOVERNMENT/SCIENCE
APPLICATIONS
- HBT Circuits used as high power
X-band radar applications
- HBT will migrate to higher frequency
microwave communication applications
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