High Volume Metal Organic Chemical Vapor Deposition (MOCVD) Device Wafer Production

	Glenn Research Center 1986 - 1988 Phase II High Volume Metal Organic Chemical Vapor Deposition (MOCVD) Device Wafer Production Kopin Corporation Taunton, MA
INNOVATION Advanced heterostructure devices for microwave communications	Epitaxial Layer Structure Optional Powerpoint file
ACCOMPLISHMENTS Introduced the first carbon-doped Heterojunction Bipolar Transistor (HBT) Device Wafer to commercial market Introduced InGaP HBT Device Wafer for High Reliability Applications	Epitaxial Layer Structure Optional Powerpoint file
COMMERCIALIZATION Leading provider of HBT Device Wafers in world wide markets Commercial sales increased 6x, from ~$3M in 1995 to est. $18M in 1998 HBT L-Band Power Amplifiers (PA) Rapidly Penetrating Cellular Handset	GOVERNMENT/SCIENCE APPLICATIONS HBT Circuits used as high power X-band radar applications HBT will migrate to higher frequency microwave communication applications
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